Microstructure of the deep level defect E1/E2 in 6H silicon carbide (Abstract)

published_or_final_versio

Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

The influence of screw dislocations on the performance of Au/n-GaN Schottky diodes was investigated. The current-voltage (I-V) characteristics of the diodes fabricated on different GaN templates grown by metallorganic chemical vapor deposition on sapphire substrates were studied. It was shown that these dislocations result in the lowering of the barrier height in the localized regions.published_or_final_versio

Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory

postprin

Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC (Abstract)

published_or_final_versio

Spatial distribution of carrier concentration in un-doped GaN film grown on sapphire (Abstract)

published_or_final_versio

Acceptors in undoped gallium antimonide

Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the GaSb defect and the VGa-related defect. The Ga Sb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.published_or_final_versio

Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

A study of neutron-irradiated n-type 6H-SiC using deep level transient spectroscopy was presented. 100- 1600°C isochronal annealing was performed on the as-irradiated samples with each of the annealing steps to investigate the thermal annealing behavior. Thermal generation of deep levels NE1- NE4 at annealing temperatures above 1400°C was observed.published_or_final_versio

Dynamic Functions of RhoA in Tumor Cell Migration and Invasion

RhoA is one of the more extensively studied members of the Rho family of small GTPase where it is most readily recognized for its contributions to actin-myosin contractility and stress fiber formation. Accordingly, RhoA function during cell migration has been relegated to the rear of the cell where it mediates retraction of the trailing edge. However, RhoA can also mediate membrane ruffling, lamellae formation and membrane blebbing, thus suggesting an active role in membrane protrusions at the leading edge. With the advent of fluorescence resonance energy transfer (FRET)-based Rho activity reporters, RhoA has been shown to be active at the leading edge of migrating cells where it precedes Rac and Cdc42 activation. These observations demonstrate a remarkable versatility to RhoA signaling, but how RhoA function can switch between contraction and protrusion has remained an enigma. This review highlights recent advances regarding how the cooperation of Rho effector Rhotekin and S100A4 suppresses stress fiber generation to permit RhoA-mediated lamellae formation

Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

The acceptors in undoped liquid encapsulated Czochralski (LEC)-grown GaSb were investigated using temperature dependent Hall (TDH) and positron lifetime spectroscopy measurements. TDH measurements were performed on nonirradiated and electron irradiated undoped samples. The 34 meV acceptor was found to be the important one responsible for the p-type conduction in nonirradiated and the e--irradiated undoped materials annealed at temperatures up to 500°C. This acceptor was not related to any VGa-related defect detected and was most likely the GaSb antisite.published_or_final_versio

Effects of annealing on the electrical properties of Fe-doped InP

The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.published_or_final_versio